SUBSTRATE FOR GROWING GROUP-III NITRIDE SEMICONDUCTORS, EPITAXIAL SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTORS, GROUP-III NITRIDE SEMICONDUCTOR ELEMENT, STAND-ALONE SUBSTRATE FOR GROUP-III NITRIDE SEMICONDUCTORS, AND METHODS FOR MANUFACTURING THE PRECEDING

摘要

An object of the present invention is to provide a Group III nitride semiconductor epitaxial substrate, a Group III nitride semiconductor element, and a Group III nitride semiconductor free-standing substrate, which have good crystallinity, with not only AlGaN, GaN, and GaInN the growth temperature of which is 1050 °C or less, but also with Al x Ga 1-x N having a high Al composition, the growth temperature of which is high; a Group III nitride semiconductor growth substrate used for producing these, and a method for efficiently producing those. The present invention provides a Group III nitride semiconductor growth substrate comprising a crystal growth substrate including a surface portion composed of a Group III nitride semiconductor which contains at least Al, and a scandium nitride film formed on the surface portion are provided.