BLANKMASK AND PHOTOMASK FOR CRITICAL DIMENSION CONTROL AND ITS MANUFACTURING

摘要

PURPOSE: A blank-mask and a photo-mask for critical dimension are provided to easily control circuit dimension deviations which are formed on a silicon wafer by controlling the exposure amount which passes through the photo-mask. CONSTITUTION: A high penetration film(2) is formed on a transparent substrate. A light-shielding layer(3) and a reflection barrier layer(4) are successively formed on the high penetration film. A resist film(5) is formed by spreading resist on the reflection barrier layer. The high penetration film is formed by a reactive sputtering method or a vacuum deposition method within a vacuum chamber in which inactive and reactive gases are introduced. The penetration ratio of the high penetration film is 3-97% in the wavelength of 150-800nm.