发明名称 METHOD OF MANUFACTURING NANOWIRES
摘要 PURPOSE: A method for manufacturing nano-wires is provided to grow nano-wires without a catalyst and selectively grow the nano-wires of a desired material by controlling an atmosphere inside a reactor. CONSTITUTION: A substrate(10) is prepared. A ternary component-based thin film containing tellurium is deposited on the substrate without a catalytic material through a sputtering process. The substrate with the thin film is annealed in a reactor of an oxidizing atmosphere. The tellurium is phase-separated to be grown from the thin film in a wire shape. The thickness of the ternary component-based thin film is 50nm. Multi-crystalline tellurium nano-wires, mono-crystalline tellurium nano-wires, resin-shaped nano-wires, or mono-crystalline nano-wires and nano-tubes are grown.
申请公布号 KR20110129800(A) 申请公布日期 2011.12.02
申请号 KR20100086371 申请日期 2010.09.03
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 LEE, HONG LIM;KIM, BYUNG KEUN
分类号 B82B3/00;C01B19/00;C23C14/34;C30B29/46 主分类号 B82B3/00
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