发明名称 |
METHOD OF MANUFACTURING NANOWIRES |
摘要 |
PURPOSE: A method for manufacturing nano-wires is provided to grow nano-wires without a catalyst and selectively grow the nano-wires of a desired material by controlling an atmosphere inside a reactor. CONSTITUTION: A substrate(10) is prepared. A ternary component-based thin film containing tellurium is deposited on the substrate without a catalytic material through a sputtering process. The substrate with the thin film is annealed in a reactor of an oxidizing atmosphere. The tellurium is phase-separated to be grown from the thin film in a wire shape. The thickness of the ternary component-based thin film is 50nm. Multi-crystalline tellurium nano-wires, mono-crystalline tellurium nano-wires, resin-shaped nano-wires, or mono-crystalline nano-wires and nano-tubes are grown.
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申请公布号 |
KR20110129800(A) |
申请公布日期 |
2011.12.02 |
申请号 |
KR20100086371 |
申请日期 |
2010.09.03 |
申请人 |
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY |
发明人 |
LEE, HONG LIM;KIM, BYUNG KEUN |
分类号 |
B82B3/00;C01B19/00;C23C14/34;C30B29/46 |
主分类号 |
B82B3/00 |
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