| 摘要 |
PURPOSE: A low-dielectric siloxane composition for a passivation layer is provided to have low permittivity, superior insulation properties, high transparency, superior thermal stability, flatness, adhesive properties, and solution- processability at low temperatures, thereby being qualified for the passivation layer of a thin film transistor. CONSTITUTION: A low-dielectric siloxane composition for a passivation layer comprises fluorinated organic oligosiloxane manufactured by a sol-gel method. The fluorinated organic oligosiloxane includes organic alkoxysilane having a symmetric structure, fluorinated alkoxysilane, and organic silanol or organic alkoxysilane having a symmetric structure. The siloxane composition includes fluorinated organic oligosiloxane having 1-30mol% fluorinated alkoxysilane comparison to the silane compound. The siloxane composition includes fluorinated organic oligosiloxane having 30-60mol% organic silanol or fluorinated alkoxysilane of the symmetric structure. |
