| 摘要 |
PURPOSE: A plasma processing apparatus and a processing gas supply structure thereof are provided to improve internal surface uniformity of processing by uniformalizing a plasma state. CONSTITUTION: A table cover is installed in order to cover the upper opening of a process chamber and comprises a dielectric window. A high frequency coil is wired on the upper side of the dielectric window of the outside of the process chamber. A gas supply device is supported in the table cover in order to locate in the inner side of the dielectric window and is composed of laminations which laminates a plurality laminates. The gas supply device supplies process gas from a plurality of sites within the process chamber to a horizontal direction after passing through gas flow paths(51-54) of a plurality of groove shapes. |
