发明名称 SURFACE TREATMENT METHOD AND SURFACE TREATMENT APPARATUS
摘要 PURPOSE: A surface processing method and apparatus are provided to level the surface of a substrate with high precision by executing planarization by a gas cluster of nitrogen after executing planarization by a gas cluster of argon. CONSTITUTION: A nozzle(21) creates a gas cluster. A material gas supplier(23) supplies gas which becomes raw materials of the gas cluster to the nozzle. A controller selects the gas which is provided from the material gas supplier and controls the gas. The material gas supplier comprises a first gas source and a second gas source. The material gas supplier irradiates the gas cluster in a target member(50). The first gas source supplies a raw material which does not include nitrogen. The second gas source supplies the nitrogen. A planarization process by CMP(Chemical Mechanical Polishing) is executed to the target member.
申请公布号 KR20110129825(A) 申请公布日期 2011.12.02
申请号 KR20110049232 申请日期 2011.05.24
申请人 HYOGO PREFECTURE;TOKYO ELECTRON LIMITED 发明人 TOYODA NORIAKI;YAMADA ISAO;NARUSHIMA MASAKI;HARASHIMA MASAYUKI;MORISAKI EISUKE
分类号 H01L21/302 主分类号 H01L21/302
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