发明名称 |
SURFACE TREATMENT METHOD AND SURFACE TREATMENT APPARATUS |
摘要 |
PURPOSE: A surface processing method and apparatus are provided to level the surface of a substrate with high precision by executing planarization by a gas cluster of nitrogen after executing planarization by a gas cluster of argon. CONSTITUTION: A nozzle(21) creates a gas cluster. A material gas supplier(23) supplies gas which becomes raw materials of the gas cluster to the nozzle. A controller selects the gas which is provided from the material gas supplier and controls the gas. The material gas supplier comprises a first gas source and a second gas source. The material gas supplier irradiates the gas cluster in a target member(50). The first gas source supplies a raw material which does not include nitrogen. The second gas source supplies the nitrogen. A planarization process by CMP(Chemical Mechanical Polishing) is executed to the target member.
|
申请公布号 |
KR20110129825(A) |
申请公布日期 |
2011.12.02 |
申请号 |
KR20110049232 |
申请日期 |
2011.05.24 |
申请人 |
HYOGO PREFECTURE;TOKYO ELECTRON LIMITED |
发明人 |
TOYODA NORIAKI;YAMADA ISAO;NARUSHIMA MASAKI;HARASHIMA MASAYUKI;MORISAKI EISUKE |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|