| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve manufacturing yield by preventing the generation of not-open when etching for a landing plug contact and to prevent the short of a gate electrode and the landing plug contact. CONSTITUTION: A recess gate domain(14) is formed on a semiconductor substrate. A first conductive film which gap-fills the recess gate domain is formed. A second conductive film(17A) and a hard mask film are laminated on the first conductive film. A second conductive layer pattern is formed by etching the hard mask film and the second conductive film. A capping layer which protects a sidewall of the second conductive layer pattern is formed. A first conductive layer pattern is formed by etching the first conductive film. A spacer layer is formed in order to cover a recessed sidewall of the first conductive layer pattern.</p> |
