| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device using an oxide semiconductor with stable electrical characteristics and to provide the semiconductor device with high reliability. <P>SOLUTION: The method of manufacturing a semiconductor device comprises the steps of: forming a first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connecting the source electrode and the drain electrode; forming a second insulating film on the oxide semiconductor film in which hydrogen atoms in the film are removed by heat treatment; and forming a gate electrode in a region overlapping the oxide semiconductor film on the second insulating film by performing oxygen doping treatment to the second insulating layer to supply oxygen atoms to the second insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
