JUNCTION FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ANALOG CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide a JFET capable of reducing influence of external noise.

SOLUTION: A JFET 50 comprises: a p-type semiconductor substrate 1; an n-type channel region 3 formed on a surface of the p-type semiconductor substrate 1; an n-type buried region 4 that is formed in the n-type channel region 3 and has a higher impurity density than that of the n-type channel region 3; a p-type gate region 6 formed on a surface of the n-type channel region 3; and an n-type drain/source region 7 and an n-type drain/source region 8 formed on the surface of the n-type channel region 3 so as to sandwich the p-type gate region 6. The n-type buried region 4 is formed under one of the n-type drain/source region 7 and the n-type drain/source region 8, but not under the other.

COPYRIGHT: (C)2012,JPO&INPIT