| 摘要 |
<p>A high-melting-point metal film (16) is formed on a gate-insulating-film-forming film. Next, the high-melting-point metal film is patterned, and a first region on the gate-insulating-film-forming film is exposed. At the same time, a metal mask (16b) that covers a second region on the gate-insulating-film-forming film is formed, and a dummy metal mask (16c) that covers a third region on the gate-insulating film-forming film is formed. Next, a metal compound film (17) for adjustment purposes is formed on the gate-insulating-film-forming film. Next, a metal for adjustment purposes contained in the metal compound film for adjustment purposes is introduced into the gate-insulating-film-forming film through a heat treatment using the metal mask and the dummy metal mask as introduction-inhibiting masks. Next, the metal compound film for adjustment purposes, the metal mask and the dummy metal mask are removed. Next, a gate-electrode-forming film (20) is formed on the gate-insulating-film-forming film. Next, the gate-electrode-forming film and the gate-insulating-film-forming film are patterned to form first and second gate insulating films (15a, 15b) and first and second gate electrodes (20a, 20b).</p> |
