| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of stably obtaining excellent characteristics, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device comprises: a semiconductor substrate of which an abrasive trace is formed on a surface; and a part of a dopant diffusion region that extends along the abrasive trace, forming an angle to the abrasive trace within a range of -5° to +5°. <P>COPYRIGHT: (C)2012,JPO&INPIT |
