FILM FORMATION METHOD AND FILM FORMATION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a film formation method and a film formation apparatus, by which a silicon oxide film with a higher wet etching resistance in comparison to conventional one can be formed in low temperature film growth at or below 350°C.

SOLUTION: A film formation method includes: loading a processing object (semiconductor wafer) into a process chamber; making the temperature of the processing object 350°C or lower; and supplying aminosilane gas and oxidation gas as Si source gas into the process chamber to form a silicon oxide film on a surface of the processing object. The oxidation gas consists of: a first oxidation gas consisting of at least one of O2gas and O3gas and a second oxidation gas consisting of at least one of H2O gas and H2O2gas.

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