发明名称 Method for producing single crystal silicon solar cell and single crystal silicon solar cell
摘要 A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
申请公布号 US2011290320(A1) 申请公布日期 2011.12.01
申请号 US201113137215 申请日期 2011.07.28
申请人 ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO;SHIN-ETSU CHEMICAL CO., LTD. 发明人 ITO ATSUO;AKIYAMA SHOJI;KAWAI MAKOTO;TANAKA KOICHI;TOBISAKA YUUJI;KUBOTA YOSHIHIRO
分类号 H01L31/0224;H01L31/0256;H01L31/18 主分类号 H01L31/0224
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