| 摘要 |
A radiation heat dissipation Light Emitting Diode (LED) structure and a manufacturing method thereof are provided. The LED structure (100) contains an LED epitaxial layer (110), a sapphire substrate (120), a thermally conductive adhering layer (130), a radiation heat dissipation film (140) and a base substrate (150). The LED epitaxial layer (110) is formed on the sapphire substrate (120). The radiation heat dissipation film (140) is formed on the base substrate (150). The thermally conductive adhering layer (130) is located between the sapphire substrate (120) and the radiation heat dissipation film (140) to bond the sapphire substrate (120) including the LED epitaxial layer (110) and the base substrate (150) including the radiation heat dissipation film (140). The radiation heat dissipation film (140) contains a metal non-metal composition, has a crystal microstructure and has high efficiency in heat radiation dissipation character. The radiation heat dissipation film (140) can transmit heat generated from the LED epitaxial layer (110) toward the base substrate (150) and further, the exterior by the way of radiation rapidly. Thus it can reduce the operation temperature of the LED epitaxial layer (110), keep the emitting operation stable and increase the service life. |
