发明名称 MEASUREMENT METHOD AND MEASUREMENT MARKS FOR PATTERN SHIFT AMOUNT BETWEEN EXPOSURE REGIONS
摘要 <P>PROBLEM TO BE SOLVED: To provide a measurement method and measurement marks for a pattern shift amount between exposure regions, which allow a speedy and real-time measurement and improvement in the failure detection rate and yield for the pattern shift amount between the exposure regions. <P>SOLUTION: The method includes: a step of forming at least one pair of conductive measurement marks having a predetermined positional relation by two exposure and other patterning processes; and a step where an electrical characteristic examination is performed for at least one pair of the conductive measurement marks and if the electrical characteristic does not correspond to the predetermined positional relation, the exposure pattern shift amount between the exposure regions in two exposure processes is determined to fail and if the electrical characteristic corresponds to the predetermined positional relation, the exposure pattern shift amount between the exposure regions in two exposure processes is determined to pass. The present invention applies to the measurement of the pattern shift amount between the exposure regions. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011242774(A) 申请公布日期 2011.12.01
申请号 JP20110109314 申请日期 2011.05.16
申请人 BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO LTD 发明人 GUOJIAN;SHU WEI-FENG;MING XING
分类号 G03F9/00;H01L21/027 主分类号 G03F9/00
代理机构 代理人
主权项
地址