| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide means for preventing occurrence of defects, which is caused by junction with an external substrate, of an element formed on a substrate. <P>SOLUTION: A semiconductor device 100 comprises a substrate 111 and a stress formation film 140. Protrusions 130 are formed on a first part and a second part of a first surface of the substrate 111. Semiconductor elements 112 are formed in the substrate 111. The stress formation film 140 is formed so as to contact a second surface opposite to the first surface of the substrate 111. The stress formation film 140 has a shape that generates a second stress P20 canceling at least a part of a first stress P10 induced by the junction of an external substrate 200 and the protrusions 130. <P>COPYRIGHT: (C)2012,JPO&INPIT |
