| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a fine SRAM with a restrained leakage current. <P>SOLUTION: The SRAM comprises a first gate electrode G1b constituting a first load transistor LT1, a second gate electrode G1a extending on an extension in a longitudinal direction of the first gate electrode G1b and away from the first gate electrode G1b and constituting a first drive transistor DT1, a third gate electrode G1b extending in parallel to the first gate electrode G1b and constituting a second load transistor LT2, a first P-type diffusion region PD21 crossing with the third gate electrode G1b and constituting the second load transistor LT2, and a first common contact SC2 formed across the first gate electrode G1b, the second gate electrode G1a and the first P-type diffusion region PD21. The first P-type diffusion region PD21 extends near a spacing region between the first gate electrode G1b and the second gate electrode G1a, but is not formed in the spacing region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
