发明名称 |
Stacked Semiconductor Memory Device, Memory System Including The Same, And Method Of Repairing Defects Of Through Silicon Vias |
摘要 |
A stacked semiconductor memory device according to the inventive concepts may include a plurality of memory chips stacked above a processor chip, a plurality of TSVs, and I/O buffers. The TSVs may pass through the memory chips and are connected to the processor chip. I/O buffers may be coupled between all or part of the memory chips and the TSVs and may be selectively activated on the basis of defective states of the TSVs.
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申请公布号 |
US2011292742(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113085776 |
申请日期 |
2011.04.13 |
申请人 |
OH TAE-YOUNG;PARK KWANG-IL;YANG YUN-SEOK;SOHN YOUNG-SOO;KIM SI-HONG;BAE SEUNG-JUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH TAE-YOUNG;PARK KWANG-IL;YANG YUN-SEOK;SOHN YOUNG-SOO;KIM SI-HONG;BAE SEUNG-JUN |
分类号 |
G11C7/10;H01L23/48 |
主分类号 |
G11C7/10 |
代理机构 |
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