| 摘要 |
Techniques and structures for increasing body dopant uniformity in multi-gate transistor devices are generally described. In one example, an electronic device includes a semiconductor substrate, a multi-gate fin coupled with the semiconductor substrate, the multi-gate fin comprising a source region, a drain region, and a gate region wherein the gate region is disposed between the source region and the drain region, the gate region being body-doped after a sacrificial gate structure is removed from the multi-gate fin and before a subsequent gate structure is formed, a dielectric material coupled with the source region and the drain region of the multi-gate fin, and the subsequent gate structure coupled to the gate region of the multi-gate fin. |
