发明名称 MANUFACTURING METHOD OF ELASTIC SURFACE ACOUSTIC WAVE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method which can manufacture an elastic surface acoustic wave device which comprises an IDT electrode formed on a piezoelectric substrate and a dielectric layer formed to cover the IDT electrode, which has at least one of the distribution line and the pad connected to the IDT electrode formed to be thicker than the electrode finger of the IDT electrode, and which has a flat surface of the dielectric layer. <P>SOLUTION: A first conductive film 18 is formed on a piezoelectric substrate 10. A dielectric layer 20 is formed by a bias-sputtering method on the piezoelectric substrate 10 to cover the first conductive film 18. A sacrificial layer 22 is formed on the dielectric layer 20. An etching-back process is done to remove the sacrificial layer 22 and a part of the dielectric layer 20. A removal process is done to remove the dielectric layer 20 which is formed on a part of the first conductive film 18. A second conductive film 19 is formed on a part of the first conductive film 18 from which the dielectric layer 20 positioned on the upside is removed in the removal process. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011244065(A) 申请公布日期 2011.12.01
申请号 JP20100112039 申请日期 2010.05.14
申请人 MURATA MFG CO LTD 发明人 KIKUCHI HIROSHI;YAMAZAKI HIROSHI;TSUDA MOTOTSUGU
分类号 H03H3/08;H03H9/145 主分类号 H03H3/08
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