发明名称 Cu-Ga ALLOY MATERIAL, SPUTTERING TARGET, AND METHOD OF MAKING Cu-Ga ALLOY MATERIAL
摘要 <P>PROBLEM TO BE SOLVED: To provide a Cu-Ga alloy material with a small amount of a segregation phase, sputtering target, and a method of producing a Cu-Ga alloy material. <P>SOLUTION: The Cu-Ga alloy material has an average composition comprising, by weight, not less than 32% and not more than 53% of gallium (Ga) and the balance being copper (Cu) and inevitable impurities. In the Cu-Ga alloy material, a region containing less than 47% of copper and inevitable voids accounts for 2% or less by volume of the whole Cu-Ga alloy material. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011241452(A) 申请公布日期 2011.12.01
申请号 JP20100115198 申请日期 2010.05.19
申请人 HITACHI CABLE LTD 发明人 HIRAMOTO YUICHI;TONOKI TATSUYA;TATSUMI NORIYUKI
分类号 C22C9/00;B22F1/00;B22F3/14;B22F3/24;B22F9/04;C22C1/04;C22C28/00;C23C14/34 主分类号 C22C9/00
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