| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce mismatch and variation of Vt in consideration of gate width dependency of Avt (variation of Vt) in an MISFET. <P>SOLUTION: A semiconductor device has a diffusion layer 205 constituting source-drain and a gate 203 formed on the diffusion layer 205 which are formed, respectively, on a semiconductor substrate, and includes a plurality of MISFETs 201 and 202 constituted of a plurality of unit MISFETs connected in parallel with each other. A standard deviation of variation of threshold voltage between the MISFETs 201 and 202 is smaller than a standard deviation of variation of threshold voltage between the unit MISFETs having the same area as a channel area that is the summation of products of the gate length and the gate width of respective unit MISFETs in each MISFET. <P>COPYRIGHT: (C)2012,JPO&INPIT |
