| 发明名称 |
THROUGH-SILICON VIAS WITH LOW PARASITIC CAPACITANCE |
| 摘要 |
A device has a silicon substrate with a via extending from a first surface of the silicon substrate having a conductor portion. A first dielectric portion surrounds the conductor portion. A second dielectric portion is disposed between a first silicon portion and the silicon substrate.
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| 申请公布号 |
US2011291287(A1) |
申请公布日期 |
2011.12.01 |
| 申请号 |
US20100786931 |
申请日期 |
2010.05.25 |
| 申请人 |
WU PAUL Y.;RAMALINGAM SURESH;KIM NAMHOON;XILINX, INC. |
发明人 |
WU PAUL Y.;RAMALINGAM SURESH;KIM NAMHOON |
| 分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
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