发明名称 WAFER DEFECT ANALYZING APPARATUS, ION ABSTRACTION APPARATUS FOR SAME, AND WAFER DEFECT ANALYZING METHOD USING SAME
摘要 Disclosed herein are a wafer defect analysis apparatus, an ion extraction device used therein and a wafer defect analysis method using the same, which separate a decoration process and an ion extraction process from each other during decoration of defective regions of a wafer and circulate an electrolyte in the ion extraction device, in which ion extraction has been completed, thus minimizing time consumed for the decoration process, thereby greatly reducing an overall time taken to perform decoration and thus shortening a wafer defect analysis time and improving efficiency of defect analysis. The wafer defect analysis apparatus, the ion extraction device used therein and the wafer defect analysis method using the same improve activity of ions during extraction of the ions for the decoration process, thereby considerably shortening an ion extraction time.
申请公布号 US2011290646(A1) 申请公布日期 2011.12.01
申请号 US201013148254 申请日期 2010.02.17
申请人 HAN HO 发明人 HAN HO
分类号 G01N27/416 主分类号 G01N27/416
代理机构 代理人
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