MANUFACTURING METHOD OF SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide substrate, a manufacturing method of a semiconductor device, and a silicon carbide substrate and a semiconductor device capable of reducing manufacturing costs of a semiconductor device using a silicon carbide substrate.

SOLUTION: The manufacturing method of a silicon carbide substrate 1 includes; a process where an SiC substrate 20 composed of single crystal silicon carbide is prepared; a process where a base substrate 10 is placed so as to contact to a principal surface 20B of one side of the SiC substrate 20 in a crucible 70; and a process where a base layer 10 composed of silicon carbide is formed so as to contact to the principal surface 20B of the one side of the SiC substrate 20 by heating the base substrate 10 to the temperature range higher than sublimation temperature of the silicon carbide which constitutes the base substrate 10. In the process where the base layer 10 is formed, a silicon source 91 composed of materials including silicon, which is different from the SiC substrate 20 and the base substrate 10, is placed in the crucible 70.

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