发明名称 |
LOW-IMPURITY ORGANOSILICON PRODUCT AS PRECURSOR FOR CVD |
摘要 |
The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane. |
申请公布号 |
US2011295033(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113205015 |
申请日期 |
2011.08.08 |
申请人 |
MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY A.;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY A. |
分类号 |
C07F7/02 |
主分类号 |
C07F7/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|