发明名称 LOW-IMPURITY ORGANOSILICON PRODUCT AS PRECURSOR FOR CVD
摘要 The present invention provides an organosilicon composition comprising diethoxymethylsilane, a concentration of dissolved residual chloride, and a concentration of dissolved residual chloride scavenger that does not yield unwanted chloride salt precipitate when combined with another composition comprising diethoxymethylsilane.
申请公布号 US2011295033(A1) 申请公布日期 2011.12.01
申请号 US201113205015 申请日期 2011.08.08
申请人 MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY A.;AIR PRODUCTS AND CHEMICALS, INC. 发明人 MAYORGA STEVEN GERARD;O'NEILL MARK LEONARD;CHANDLER KELLY A.
分类号 C07F7/02 主分类号 C07F7/02
代理机构 代理人
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