发明名称 MEMORY WORD-LINE DRIVER HAVING REDUCED POWER CONSUMPTION
摘要 A word-line driving circuit for driving a word-line in a memory array includes a NAND circuit having a pair of address inputs and an output, an output inverter circuit having an inverter power supply node, an input coupled to the output of the NAND circuit and an output for providing a word line signal, a power gate coupled between a first power supply node and the inverter power supply node, and a control circuit coupled to the power gate. The control circuit controls the power gate to place the word line driver circuit in active or standby mode in response to the output of the NAND circuit.
申请公布号 US2011292754(A1) 申请公布日期 2011.12.01
申请号 US20100786791 申请日期 2010.05.25
申请人 CHAN WEI MIN;CHEN YEN-HUEI;YANG CHEN-LIN;YANG HSIU-HUI;CHOU SHAO-YU;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHAN WEI MIN;CHEN YEN-HUEI;YANG CHEN-LIN;YANG HSIU-HUI;CHOU SHAO-YU
分类号 G11C8/08 主分类号 G11C8/08
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