| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress a region of a photoelectric conversion element that light does not reach, suppress deterioration of power generation efficiency, and suppress the manufacturing cost of a voltage conversion element. <P>SOLUTION: A photoelectric conversion device comprises: a light-transmitting photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which overlaps with the photoelectric conversion element and which has an oxide semiconductor film in a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having the oxide semiconductor film in the channel formation region. The voltage conversion element is a DC-DC converter. <P>COPYRIGHT: (C)2012,JPO&INPIT |
