发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus which can attempt to improve in-plane uniformity of a process and improve miniaturization and process efficiency of the device while allowing for the gap between an upper electrode and a lower electrode to be changed easily. <P>SOLUTION: A plasma processing apparatus comprises: a lower electrode 202 provided inside a processing chamber 201; an upper electrode 100 which has a function as a shower head and which can move in a vertical direction; a lid 205 provided on the upper side of the upper electrode to block the upper opening of the processing chamber air-tightly; multiple exhaust holes 13 formed inside the plane of the upper electrode; an annular member 220 which is provided to protrude downward along the circumference of the upper electrode and to move in a vertical direction interlocked with the electrode and which forms a processing space surrounded by the lower and upper electrodes in the drop position; a coil 240 positioned to be housed in a dielectric container 230 in the part of the inner wall of the annular member. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011243688(A) 申请公布日期 2011.12.01
申请号 JP20100113262 申请日期 2010.05.17
申请人 TOKYO ELECTRON LTD 发明人 IIZUKA YASHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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