| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device capable of extracting light in high efficiency. <P>SOLUTION: A light-emitting diode 20 includes an Si substrate 21 and a semiconductor layer formed thereon by epitaxial growth. The semiconductor layer is composed of an n-type GaN layer (n-type semiconductor layer) 22 and a p-type GaN layer (p-type semiconductor layer) 23. On a side surface of the light-emitting diode 20, a light translucent insulating layer 30 is adjacently formed. In this structure, both main surfaces of the light-emitting diode 20 and the light translucent insulating layer 30 are covered with a common transparent electrode 42. In a region of the transparent electrode 42 on the light translucent insulating layer 30, an electrode pad 43 is formed. Since the electrode pad 43 is not formed on the light-emitting diode 20, light is not intercepted by such as the electrode pad 43, a bonding wire connected to the electrode pad, solder, or soldered wiring. <P>COPYRIGHT: (C)2012,JPO&INPIT |
