发明名称 IMAGE SENSOR FOR CMOS TECHNOLOGY WITH HIGH VIDEO CAPTURE RATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a CMOS image sensor with a TDI functionality with which motion MTF may be improved. <P>SOLUTION: An image sensor includes a matrix of photoelectric pixels Px arrayed in rows and columns, and a first matrix 16a of memory cells connected to a control and addition means 18 for storing stored luminance levels of several pixel rows into rows of memory cells. The first memory cell matrix 16a is provided to store the stored luminance levels of first half rows in the matrix of pixels into the rows using the control and addition means. The sensor includes a second memory cell matrix 16b connected to the control and addition means for storing the stored luminance levels of second half rows of the pixel matrix into the rows of the second memory cell matrix. A means 20 is provided to add the levels stored in the columns of the first memory cell matrix with the levels stored in the corresponding columns of the second memory cell matrix. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2011244452(A) 申请公布日期 2011.12.01
申请号 JP20110109096 申请日期 2011.05.16
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 发明人 YVONNE KAZO;BENOIT JAIPHAL
分类号 H04N5/374 主分类号 H04N5/374
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