| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing a malfunction of a protected element by an electron which enters the inner part of a semiconductor substrate from an output element. <P>SOLUTION: The semiconductor device is provided with a semiconductor substrate, an output element, a protected element TRS, a tap part ATD, and a first active barrier structure ABR. The first active barrier structure ABR is arranged between the protected element TRS and the tap part ATD. The first active barrier structure ABR includes an n-type area connected to a p-type impurity area PSR and a p-type area with which the n-type area is made an ohmic connection. <P>COPYRIGHT: (C)2012,JPO&INPIT |
