OPTOELECTRONIC SEMICONDUCTOR CHIP

摘要

In at least one embodiment of the optoelectronic semiconductor chip (1) the same comprises a substrate (2) and a semiconductor layer sequence (3) which is epitaxially grown on the substrate (2). The semiconductor layer sequence (3) is based on a nitride compound semiconductor material and includes at least one active zone (4) for generating electromagnetic radiation and at least one waveguide layer (5) which adjoins the active zone (4) indirectly or directly, thereby forming a waveguide (45). The semiconductor layer sequence (4) further comprises a p-cladding (6p) adjoining the waveguide layer (4) on a p-doped side or/and an n-cladding (6n) on an n-doped side of the active zone (4). The waveguide layer (5) adjoins the cladding (6n, 6p) indirectly or directly. An effective refractive index (neff) of a mode (M) passing through the waveguide is higher than a refractive index of the substrate (2).