发明名称 |
Post Implant Wafer Heating Using Light |
摘要 |
An ion implantation system, method, and apparatus for abating condensation in a cold ion implant is provided. An ion implantation apparatus is configured to provide ions to a workpiece positioned in a process chamber. A sub-ambient temperature chuck supports the workpiece during an exposure of the workpiece to the plurality of ions. The sub-ambient temperature chuck is further configured to cool the workpiece to a processing temperature, wherein the process temperature is below a dew point of an external environment. A load lock chamber isolates a process environment of the process chamber from the external environment. A light source provides a predetermined wavelength of electromagnetic radiation to the workpiece concurrent with the workpiece residing within the load lock chamber, wherein the predetermined wavelength or range of wavelengths is associated with a maximum radiant energy absorption range of the workpiece, wherein the light source is configured to selectively heat the workpiece. |
申请公布号 |
US2011291022(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US20100944407 |
申请日期 |
2010.11.11 |
申请人 |
LEE WILLIAM D.;FARLEY MARVIN;DIVERGILIO WILLIAM;AXCELIS TECHNOLOGIES, INC. |
发明人 |
LEE WILLIAM D.;FARLEY MARVIN;DIVERGILIO WILLIAM |
分类号 |
H01J37/20;H01J37/08;H01J37/18 |
主分类号 |
H01J37/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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