| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode (LED) chip capable of performing light conversion such as wavelength conversion at a chip level and a method of fabricating the same. <P>SOLUTION: A light emitting diode (LED) chip having a wavelength conversion layer and a method of fabricating the same, and a package having the LED chip are disclosed. According to one embodiment, an LED chip comprises: a substrate; a GaN-based compound semiconductor stacked structure arranged on the top surface of the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; an electrode electrically connected to the semiconductor stacked structure; an additional electrode formed on the electrode; and a wavelength converting layer covering an upper portion of the semiconductor stacked structure. Moreover, the additional electrode passes through the wavelength converting layer. This configuration makes it possible to provide an LED chip which can perform light conversion such as wavelength conversion and in which wire bonding can be easily performed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
