发明名称 |
SEMICONDUCTOR THIN FILM SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor thin film substrate having semiconductor layers with different film thicknesses formed out of one semiconductor layer, and to provide a semiconductor device including the semiconductor thin film substrate. <P>SOLUTION: A manufacturing method of a semiconductor thin film substrate comprises forming a semiconductor layer on a substrate, forming a first island-shaped semiconductor layer and a second island-shaped semiconductor layer by processing the semiconductor layer, and melting the first island-shaped semiconductor layer by irradiating the first island-shaped semiconductor layer with a laser, thereby forming a third island-shaped semiconductor layer with a larger thickness than that of the second island-shaped semiconductor layer out of the first island-shaped semiconductor layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2011243912(A) |
申请公布日期 |
2011.12.01 |
申请号 |
JP20100117128 |
申请日期 |
2010.05.21 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SHIMOMURA AKIHISA;OKUNO NAOKI |
分类号 |
H01L21/20;H01L21/02;H01L21/265;H01L21/336;H01L21/8238;H01L27/08;H01L27/092;H01L27/12;H01L29/786;H01L31/02 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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