| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of fabricating a power semiconductor substrate. <P>SOLUTION: The present invention relates to the method of fabricating a power semiconductor substrate in which the power semiconductor substrate 12 including an insulating flat base body 14 having a layer sequence comprising a sintered metal layer 18 and a conductive layer 20 on at least one main surface 16 is fabricated by being applied with pressure and exposed to a temperature, wherein at least the one power semiconductor substrate 12 is surrounded with a potting material 28 and then put in a pressure chamber 10 filled with liquid 30 to be applied with the pressure and exposed to the temperature, so that the pressure is immediately effective isotropically on at least the one power semiconductor substrate 12 and the temperature is effective on at least the one power semiconductor substrate 12 in connecting the base body 14 to the relative conductive layer 20 in contact by means of the sintered metal layer 18 in a manner of temporal delay by the potting material 28 having a defined wall thickness. <P>COPYRIGHT: (C)2012,JPO&INPIT |
