| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device that has stable far-field pattern (FFP) characteristics even when the power of laser light is increased to be wide angled. <P>SOLUTION: The nitride semiconductor laser device includes an n-type clad layer 2 formed on an n-type substrate 1, an active layer 4 formed on the n-type clad layer, a p-type clad layer 6 formed on the active layer and having a projection-sectioned ridge portion 6a extending in an emission direction of light and flat portions 6b located on both sides of the ridge portion, light absorption layers 9 formed on both the flat portions and having a larger optical absorption coefficient than that of the p-type clad layer, and an insulating film 8 formed on an upper surface of the p-type clad layer including the absorption layers, and side faces of the ridge portion. The light absorption layers have a first region provided on an emission end surface side such that the distance from the center of the ridge portion to an end face of the ridge portion side of the light absorption layer is Di1, and a second region provided on the opposite side from the emission end surface such that the distance from the center of the ridge portion to an end face of the ridge portion side of the light absorption layer is Di2, Di1 and Di2 satisfying Di1<Di2. <P>COPYRIGHT: (C)2012,JPO&INPIT |
