| 摘要 |
A mechanism is provided for dynamic row-width memory. The memory adapts row width to usage based on memory controller and memory management system software control. The mechanism uses an organization and control of memory array access logic. The memory controller may receive an explicit command using existing column address lines or using a command line into the memory controller. In a first option, the memory controller receives a row width and disables the unused columns and turns off the unused sense amps. In a second option, the memory controller receives a row width and adjusts row count, keeping the number of active cells constant. In a third option, the memory controller receives a row width and adjusts a number of banks.
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