DEFECT INSPECTING METHOD, DEFECT INSPECTING APPARATUS, AND RECORDING MEDIUM

摘要

According to one embodiment, a defect inspecting method includes: separately detecting an amount of first secondary electrons emitted from a semiconductor substrate at a first elevation angle and an amount of second secondary electrons emitted at a second elevation angle different from the first elevation angle; creating potential contrast images respectively from the detected amounts of the first and second secondary electrons; determining a combination ratio of the created respective potential contrast images; combining the potential contrast images respectively created from the first and second secondary electrons at the determined combination ratio; and extracting a defect based on the combined potential contrast image. The determining a combination ratio includes: calculating the luminance of the bottom between the wires; determining whether the calculated luminance exceeds a predetermined reference value; and changing the combination ratio when the calculated luminance does not exceed the predetermined reference value.