发明名称 |
NAND-BASED 2T2b NOR FLASH ARRAY WITH A DIODE CONNECTION TO CELL'S SOURCE NODE FOR SIZE REDUCTION USING THE LEAST NUMBER OF METAL LAYERS |
摘要 |
A NAND-based NOR flash memory array has a matrix of NAND-based NOR flash cells arranged in rows and columns. Every two adjacent NAND-based NOR flash cells in a column share a common source node which is connected to a common source line through a diode. The source line may be made of a metal layer and is in contact directly with the source node or through an ohmic contact to form a Schottky barrier diode. The source line may also be made of a polysilicon or metal layer and connected to the source node through a pillar-structured polysilicon diode and a conduction layer. The diode may also be formed in the source node by enclosing a P/N+ junction diode in a heavily N+ doped region of the source node. |
申请公布号 |
US2011292738(A1) |
申请公布日期 |
2011.12.01 |
申请号 |
US201113116002 |
申请日期 |
2011.05.26 |
申请人 |
HSU FU-CHANG;LEE PETER WUNG |
发明人 |
HSU FU-CHANG;LEE PETER WUNG |
分类号 |
G11C16/10;G11C16/16 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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