FORMING METHOD AND CRYSTALLIZATION METHOD FOR AN OXIDE SEMICONDUCTOR THIN FILM USING A LIQUID-PHASE PROCESS, AND A METHOD FOR FORMING SEMICONDUCTOR ELEMENTS BY USING THE SAME,申请号WO2010KR03263-传众专利搜索

发明名称	FORMING METHOD AND CRYSTALLIZATION METHOD FOR AN OXIDE SEMICONDUCTOR THIN FILM USING A LIQUID-PHASE PROCESS, AND A METHOD FOR FORMING SEMICONDUCTOR ELEMENTS BY USING THE SAME
摘要	<p>Provided are oxide semiconductor thin film forming and crystallization methods and a flash memory forming method using a liquid-phase process, and also an oxide semiconductor thin film transistor and a method for forming the same.</p>
申请公布号	WO2011149118(A1)	申请公布日期	2011.12.01
申请号	WO2010KR03263	申请日期	2010.05.24
申请人	INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY;KIM, HYUN JAE;LEE, KEUN WOO;HEO, KON YI;JEONG, TAE HOON;SHIN, HYUN SOO;KIM, GUN HEE;AHN, BYUNG DU;KIM, KYUNG HO	发明人	KIM, HYUN JAE;LEE, KEUN WOO;HEO, KON YI;JEONG, TAE HOON;SHIN, HYUN SOO;KIM, GUN HEE;AHN, BYUNG DU;KIM, KYUNG HO
分类号	H01L21/208;H01L21/8247;H01L27/14;H01L29/786;H01L31/042	主分类号	H01L21/208
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