INTERMEDIATE LAYER FOR LAMINATE-TYPE PHOTOELECTRIC CONVERSION DEVICE, LAMINATE-TYPE PHOTOELECTRIC CONVERSION DEVICE, AND PROCESS FOR PRODUCTION OF LAMINATE-TYPE PHOTOELECTRIC CONVERSION DEVICE

摘要

An intermediate layer (4) for a laminate-type photoelectric conversion device, which comprises an n-type silicon-containing laminate (41) comprising an n-type crystalline silicon-containing semiconductor layer (41a) and an n-type silicon-containing composite layer (41b) and a p-type silicon-containing laminate (42) comprising a p-type crystalline silicon-containing semiconductor layer (42a) and a p-type silicon-containing composite layer (42b), wherein the n-type crystalline silicon-containing semiconductor layer (41a) in the n-type silicon-containing laminate (41) and the p-type crystalline silicon-containing semiconductor layer (42a) in the p-type silicon-containing laminate (42) are in contact with each other; a laminate-type photoelectric conversion device which involves the intermediate layer (4); and a process for producing a laminate-type photoelectric conversion device.