III-NITRIDE LIGHT-EMITTING DEVICE GROWN ON A RELAXED LAYER

摘要

A light - emitting device includes a first semiconductor layer (30), a second semiconductor layer (32), a third semiconductor layer (34), and a semiconductor structure (10) comprising a 111 -nitride light emitting layer (36) disposed between an n-type region (34) and a p-type region (38). The second semiconductor layer (32) is disposed between the first semiconductor layer (30) and the third semiconductor layer (34). The third semiconductor layer (34) is disposed between the second semiconductor layer (32) and the light emitting layer (36). A difference between the in-plane lattice constant of the first semiconductor layer (30) and the bulk lattice constant of the third semiconductor layer (34) is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer (30) and the bulk lattice constant of the second semiconductor layer (32) is at least 1%. The third semiconductor layer (34) is at least partially relaxed.