| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory capable of error detection and correction on stored data even if a line failure occurs without increasing footprint. <P>SOLUTION: The nonvolatile memory comprises a memory cell block MB, a word line selection circuit 11 for selecting one of a plurality of word lines, a bit line selection circuit 12 for selecting one of a plurality of bit lines, and an ECC data generation part 2 for generating a sequence of data with ECC by adding error correcting codes to writing target normal data given from outside. The memory cells in which each bit of data with the same ECC are to be written are determined to be different positions in a row direction and column direction. <P>COPYRIGHT: (C)2012,JPO&INPIT |
