| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve formation of a fine photoresist pattern by using a laminated film including a near infrared light absorbing film formed by an invented material and a photoresist film for the optical lithography to improve the detection accuracy of optical auto-focusing, to clear a projected image of the optical lithography and to improve the contrast of the projected image. <P>SOLUTION: A near infrared light absorption film forming material includes (A) one or more sorts of polymer compounds including a repeating unit shown by the following formula (1), (B) one or more sorts of near infrared light absorbing pigments and (C) one or more sorts of solvents. (R indicates a hydrogen atom, a hydroxyl group, a carboxyl group, a hydroxylmethyl group, an alkoxy group, an alkoxycarbonyl group, an acyloxy group, or a linear, branched or annular univalent hydrocarbon group, and in the case of R being the univalent hydrocarbon group, a part of its hydrogen atoms may be substituted with halogen atoms, and -CH<SB POS="POST">2</SB>- therein may be substituted with -O- or -C(=O)-, and n indicates an integer value of 1 to 5). <P>COPYRIGHT: (C)2012,JPO&INPIT |
