| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device whose performance does not deteriorate in spite of a relative growth of parasitic capacitance among word lines. <P>SOLUTION: The semiconductor storage device is provided with a memory cell array which is provided with a plurality of word lines wired in a first direction, a plurality of bit lines wired in a direction intersecting with the first direction, and a plurality of DRAM cells disposed in association with intersection points of the plurality of word lines and bit lines; a word line driver for driving the plurality of word lines; and a plurality of word line potential stabilization transistors which are connected to each of the plurality of word lines and disposed opposite to the word line driver across the memory cell array, and which are conducted and connect the relevant word line with non-selective potential when a word line next to the relevant word line is selected, and are not conducted when the relevant word line is selected. <P>COPYRIGHT: (C)2012,JPO&INPIT |
