IRON CONCENTRATION MEASURING METHOD OF BORON DOPED P-TYPE SILICON WAFER AND MEASURING APPARATUS, SILICON WAFER, AS WELL AS MANUFACTURING METHOD OF SILICON WAFER

摘要

PROBLEM TO BE SOLVED: To provide means to highly accurately measure iron concentration of a boron doped p-type silicon wafer by using an Fe-B pair dissociation phenomenon.

SOLUTION: The concentration measurement method of a boron doped p-type silicon wafer, based on a difference in measured values while an Fe-B pair is bonded and while an Fe-B pair is dissociated by light irradiation, obtains the measurement values after forming, by irradiating light onto the silicon wafer to be measured, a B-O defect which is a bonded body of a boron atom contained in the wafer and an oxygen atom.

COPYRIGHT: (C)2012,JPO&INPIT