| 摘要 |
A method of manufacturing an image sensor having a plurality of pixels, each pixel having a photoelectric converter including an accumulation region, and a transfer gate, the accumulation region extending under a corresponding transfer gate, the plurality of pixels including a plurality of pixel groups, each pixel group including N adjacent pixels, and the channels of the N adjacent pixels, in each pixel group, being configured to transfer the charges of the N adjacent pixels away from each other, the method comprising a step of forming a resist pattern having one opening corresponding to each pixel group, and a step of forming a charge accumulation region for each of the N adjacent pixels by implanting ions into a substrate through the one opening of the resist pattern along N ion implantation directions so as to implant the ions under the transfer gate of each of the N adjacent pixels. |
