MAGNETIC TUNNEL JUNCTION DEVICE HAVING AMORPHOUS BUFFER LAYERS THAT ARE MAGNETICALLY CONNECTED TOGETHER AND THAT HAVE PERPENDICULAR MAGNETIC ANISOTROPY
摘要
According to a first embodiment of the present invention, a magnetic tunnel junction device comprises: a free layer having a magnetization in a variable direction; a pinned layer having a magnetization in a pinned direction; and a tunnel insulation film formed between the free layer and the pinned layer, wherein the pinned layer includes a ferromagnetic film and an amorphous metal film. In addition, a magnetic device according to a second embodiment of the present invention comprises: an amorphous or nanocrystal material layer; and a perpendicular magnetic anisotropic material layer formed on the amorphous or nanocrystal material layer. The amorphous or nanocrystal material layer is a predefined amorphous material or nanocrystal material layer serving as a lower layer, and the perpendicular magnetic anisotropic material layer is formed on the amorphous or nanocrystal material layer.
申请公布号
WO2011149274(A2)
申请公布日期
2011.12.01
申请号
WO2011KR03847
申请日期
2011.05.26
申请人
KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION;RHIE, KUNGWON;HONG, JINKI;JUNG, KU-YOUL;KIM, JONGHYUN;KIM, DONGSUK